Quantum Dots: Fundamentals, Applications, and Frontiers

Proceedings of the NATO ARW on Quantum Dots: Fundamentals, Applications and Frontiers, Crete, Greece 20 - 24 July 2003

416 Seiten, Taschenbuch

Kurzbeschreibung des Verlags

Atomistic Processes during Quantum Dot Formation.- Quantum Dots in the InAs/GaAs System.- First-Principles Study of InAs/GaAs(001) Heteroepitaxy.- Formation of Two-Dimensional Si/Ge Nanostructures Observed by STM.- Diffusion, Nucleation and Growth on Metal Surfaces.- The Stranski-Krastanov Transition.- The Mechanism of the Stranski-Krastanov Transition.- Off-Lattice KMC Simulations of Stranski-Krastanov-Like Growth.- Temperature Regimes of Strain-Induced InAs Quantum Dot Formation.- Kinetic Modelling of Strained Films: Effects of Wetting and Facetting.- Ge/Si Nanostructures with Quantum Dots Grown by Ion-Beam-Assisted Heteroepitaxy.- Self-Assembly of Quantum Dot Arrays.- Lateral Organization of Quantum Dots on a Patterned Substrate.- Some Thermodynamic Aspects of Self-Assembly of Quantum Dot Arrays.- The Search for Materials with Self-Assembling Properties: The Case of Si-Based Nanostructures.- Structure and Composition of Quantum Dots.- X-Ray Scattering Methods for the Study of Epitaxial Self-Assembled Quantum Dots.- Carbon-Induced Ge Dots On Si(100): Interplay of Strain and Chemical Effects.- Growth Information Carried by Reflection High-Energy Electron Diffraction.- Electrons and Holes in Quantum Dots.- Efficient Calculation of Electron States in Self-Assembled Quantum Dots: Application to Auger Relaxation.- Quantum Dot Molecules and Chains.- Collective Properties of Electrons and Holes in Coupled Quantum Dots.- Phase Transitions in Wigner Molecules.- Fast Control of Quantum States in Quantum Dots: Limits due to Decoherence.- Optical Properties of Quantum Dots.- Real SpaceAb Initio Calculations of Excitation Energies in Small Silicon Quantum Dots.- GeSi/Si(001) Structures with Self-Assembled Islands: Growth and Optical Properties.- Quantum Dots in High Electric Fields: Field and Photofield Emission from Ge Nanoclusters on Si(100).- Optical Emission Behavior of Si Quantum Dots.- Strain-Driven Phenomena upon Overgrowth of Quantum Dots: Activated Spinodal Decomposition and Defect Reduction.

• Reihe: NATO Science Series II: Mathematics, Physics and Chemistry
• Themen: Technologie, Ingenieurswissenschaft, Landwirtschaft, Industrieprozesse Maschinenbau und Werkstoffe Materialwissenschaft Technische Anwendung von elektronischen, magnetischen, optischen Materialien
• ISBN: 9781402033148
• Sprache: Englisch
• Erscheinungsdatum: 09.06.2005
• Größe: 233 x 155 mm
• Verlag: Springer
• Herausgegeben von: Bruce A. Joyce, Anton G. Naumovets, Pantelis C. Kelires, Dimitri Vvedensky