Amorphous and Crystalline Silicon Carbide and Related Materials

Proceedings of the First International Conference, Washington DC, December 10 and 11, 1987

199 Seiten, Taschenbuch

Kurzbeschreibung des Verlags

Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.

• Reihe: Springer Proceedings in Physics
• Themen: Technologie, Ingenieurswissenschaft, Landwirtschaft, Industrieprozesse Maschinenbau und Werkstoffe Materialwissenschaft Werkstoffprüfung
• ISBN: 9783642934087
• Sprache: Englisch
• Erscheinungsdatum: 19.01.2012
• Größe: 24.4 x 17 cm
• Verlag: Springer Berlin
• Herausgegeben von: Gary L. Harris, Cary Y.-W. Yang