The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

von Zhiqiang Li

59 Seiten, Taschenbuch

Kurzbeschreibung des Verlags

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced  source/drain parasitic resistance is demonstrated in the  fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

• Reihe: Springer Theses
• Themen: Technologie, Ingenieurswissenschaft, Landwirtschaft, Industrieprozesse Elektronik, Nachrichtentechnik Elektronik Elektronische Geräte und Materialien
• ISBN: 9783662570265
• Sprache: Englisch
• Erscheinungsdatum: 07.06.2018
• Größe: 23.5 x 15.5 cm
• Verlag: Springer Berlin